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Deposition

Sputtering technology

High-energy residual emission and collision/ionization with neutral gas

Ion acceleration due to positive bias near the target / Collision with the target and transferring momentum through the cathode sheath → Total bias (Vp-Vc): 200 ~ 1000eV by IV characteristics

Target leaving the lattice and moving to the substrate: 3~10eV

Secondary electron emission and self-discharge are maintained when ions collide with the target.

Collision of electrons with surrounding gas, generation of radical and negative ions / Impact of acceleration material along the anode sheath

Condensation and thin film formation on the surface of the released target particles

Sputtering deposition process

#1 R2R Sputtering Equipment

Effective Width 400m less then
Film Thickness 25㎛ or more
Roll Diameter 500m
Pretreatm ent Plasma Pretreatm ent
Cathode 1(Single)ea + 1(Dual)ea
Sputter Power DC 1ea + MF 1Set
Heating System IR-Heater / Drum

#2 R2R Sputtering Equipment

Deposition effective width 1500m
film thickness 1500m
Film roll diameter 3000m
Installed film length 3000m
film length < 5.0E-5Pa
maximum vacuum < 5.0E-4Pa
Reach input Plasma treatment (ea)
speaker device 6(Single)ea+1(Dual)ea
speaker power MF(1)ea / DC(6)ea
Giza heating device IR Heater / Drum
vacuum pump Dry Pump+B
Four Cold
vacuum chamber drum/water
Film substrate driving device
Plasma pretreatment
TMP / Cryo coil
Sputter device Cathode (dual)
Power output device
Gas supply control